VN2210 Datasheet دیتاشیت

VN2210 Datasheet

مشخصات دیتاشیت

نام دیتاشیت VN2210 Datasheet
حجم فایل 1111.898 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت VN2210 Datasheet-Isee

دانلود دیتاشیت

سایر مستندات

VN2210N2 14 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Microchip Tech VN2210N3-G
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 740mW
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 500pF@25V
  • Continuous Drain Current (Id): 1.2A
  • Gate Threshold Voltage (Vgs(th)@Id): 2.4V@10mA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 350mΩ@4A,10V
  • Package: TO-92
  • Manufacturer: Microchip Tech
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 10mA
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • detail: N-Channel 100V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3

محصولات مشابه